Top Semiconductors Patent – Semiconductor device and manufacturing method thereof – US7674650

U.S. Patent 7674650 was awarded to Semiconductor Energy Laboratory Co., Ltd. on 2010-03-09 and describes a “Semiconductor device and manufacturing method thereof.” This patent has been cited 2609 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region. Link: U.S. Patent 7674650

This patent was originally filed on 2006-09-21 which gives it a processing time of 1265 days, compared to an average processing time of 1167 in the field. Semiconductor Energy Laboratory Co., Ltd. has 12178 total patents. The first named inventor is Tatsuya Honda of Isehara, Kanagawa. The primary examiner was Caridad M Everhart.

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Top Semiconductors Patent – Thin film transistor, method of manufacturing the same and flat panel display device having the same – US7994500

U.S. Patent 7994500 was awarded to Samsung Mobile Display Co., Ltd. on 2011-08-09 and describes a “Thin film transistor, method of manufacturing the same and flat panel display device having the same.” This patent has been cited 325 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented. Link: U.S. Patent 7994500

This patent was originally filed on 2009-04-16 which gives it a processing time of 845 days, compared to an average processing time of 1063 in the field. Samsung Mobile Display Co., Ltd. has 1224 total patents. The first named inventor is Hyun-jong Kook Chung of Hwaseong-si, Gyeonggi-do. The primary examiner was Long Pham.

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Top Semiconductors Patent – Semiconductor device and manufacturing method thereof – US7732819

U.S. Patent 7732819 was awarded to Semiconductor Energy Laboratory Co., Ltd. on 2010-06-08 and describes a “Semiconductor device and manufacturing method thereof.” This patent has been cited 2514 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region. Link: U.S. Patent 7732819

This patent was originally filed on 2008-08-01 which gives it a processing time of 676 days, compared to an average processing time of 1154 in the field. Semiconductor Energy Laboratory Co., Ltd. has 12178 total patents. The first named inventor is Tatsuya Honda of Isehara, Kanagawa. The primary examiner was Caridad M Everhart.

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Top Semiconductors Patent – Display – US7791072

U.S. Patent 7791072 was awarded to Canon Kabushiki Kaisha on 2010-09-07 and describes a “Display.” This patent has been cited 489 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

An active matrix display comprising a light control device and a field effect transistor for driving the light control device. The active layer of the field effect transistor comprises an amorphous. Link: U.S. Patent 7791072

This patent was originally filed on 2005-11-09 which gives it a processing time of 1763 days, compared to an average processing time of 1238 in the field. Canon Kabushiki Kaisha has 66982 total patents. The first named inventor is Kenji Nomura of San Jose, CA. The primary examiner was Kiesha R Bryant.

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Top Semiconductors Patent – Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film – US7791074

U.S. Patent 7791074 was awarded to Canon Kabushiki Kaisha on 2010-09-07 and describes a “Field effect transistor using amorphous oxide film as channel layer, manufacturing method of field effect transistor using amorphous oxide film as channel layer, and manufacturing method of amorphous oxide film.” This patent has been cited 336 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

An amorphous oxide containing hydrogen (or deuterium) is applied to a channel layer of a transistor. Accordingly, a thin film transistor having superior TFT properties can be realized, the superior TFT properties including a small hysteresis, normally OFF operation, a high ON/OFF ratio, a high saturated current, and the like. Furthermore, as a method for manufacturing a channel layer made of an amorphous oxide, film formation is performed in an atmosphere containing a hydrogen gas and an oxygen gas, so that the carrier concentration of the amorphous oxide can be controlled. Link: U.S. Patent 7791074

This patent was originally filed on 2006-09-05 which gives it a processing time of 1463 days, compared to an average processing time of 1283 in the field. Canon Kabushiki Kaisha has 66982 total patents. The first named inventor is Tatsuya Iwasaki of , Kanagawa Prefecture. The primary examiner was Dao H Nguyen.

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