Top Semiconductors Patent – Thin film transistor, method of manufacturing the same and flat panel display device having the same – US7994500

U.S. Patent 7994500 was awarded to Samsung Mobile Display Co., Ltd. on 2011-08-09 and describes a “Thin film transistor, method of manufacturing the same and flat panel display device having the same.” This patent has been cited 325 times by other U.S. patents which places it in the top 500 cited patents since 2010 according to our law firm research, and makes it of the most innovative semiconductors patents in the field of electrical engineering. The abstract states:

A thin film transistor (TFT) using an oxide semiconductor as an active layer, a method of manufacturing the TFT, and a flat panel display device having the TFT include source and drain electrodes formed on a substrate; an active layer formed of an oxide semiconductor disposed on the source and drain electrodes; a gate electrode; and an interfacial stability layer formed on at least one of top and bottom surfaces of the active layer. In the TFT, the interfacial stability layer is formed of an oxide having a band gap of 3.0 to 8.0 eV. Since the interfacial stability layer has the same characteristics as a gate insulating layer and a passivation layer, chemically high interface stability is maintained. Since the interfacial stability layer has a band gap equal to or greater than that of the active layer, charge trapping is physically prevented. Link: U.S. Patent 7994500

This patent was originally filed on 2009-04-16 which gives it a processing time of 845 days, compared to an average processing time of 1063 in the field. Samsung Mobile Display Co., Ltd. has 1224 total patents. The first named inventor is Hyun-jong Kook Chung of Hwaseong-si, Gyeonggi-do. The primary examiner was Long Pham.

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